Development of a Device for On-Die Double-Pulse Testing and Measurement of Dynamic On-Resistance of GaN HEMTs

On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and current switching. This paper describes design a tester for double-pulse switching test measurement dynamic on-state resistance unpackaged High-Electron-Mobility Transistors (GaN HEMTs). The is capable an inductive load at drain-to-source voltage up 400 V drain 10 A. Design resulting from specific properties GaN HEMTs on-die are explained, solutions proposed. Essential parts the developed device described, including low inductance gate-driver methods. Modified clamping circuit accurate described. constructed as printed board, integrated into probe station. Voltage waveforms measured with oscilloscope used calculate on-resistance. Results reference commercially available packaged transistors presented. Waveforms on experimental normally-off HEMT samples also presented discussed. proposed proved be performing on-resistance satisfactory results.